Polycrystalline silicon thin films for MEMS applications

Thin Solid Films

Volumn 427, Issue 1-2, 2003, Pages 422-426

  Mahfoz Kotb, H ^a   Salaun A C ^a   Mohammed Brahim, T ^a   Le Bihan, F ^a   El Marssi, M ^b  

^a UNIVERSITÉ DE RENNES 1   (France)

^b Universite de Picardie Jules Verne   (France)

Author keywords

Air gap TFTs; Polysilicon; Residual stress

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTALLIZATION; DOPING (ADDITIVES); ELECTROSTATICS; LOW TEMPERATURE EFFECTS; MICROELECTROMECHANICAL DEVICES; POLYCRYSTALLINE MATERIALS; POLYSILICON; TENSILE STRESS; THIN FILM TRANSISTORS; THRESHOLD VOLTAGE;

LOW PRESSURE CHEMICAL VAPOR DEPOSITION (LPCVD);

THIN FILMS;

EID: 0037416526     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(02)01201-4     Document Type: Conference Paper

References (13)

1. Benitez M.A., Plaza J.A., Sheng S.Q., Esteve J. J. Micromech. Microeng. 6:1996;36-38.
2. Youngjoo Y., Kkjin C., Jong D.L., Chang-Jin K. Sensors Actuat. A. 52:1996;145-150.
3. Masterangelo C.H. Mater. Res. Soc. Symp. Proc. 605:2000;105-116.
4. Hoffman R.W. Hass G., Thun T.E. Physics of Thin Films. third ed. 1966;211 Academic Press, New York.
5. Noyan I.C., Huang T.C., York B.R. Solid State Mater. Sci. 20:(2):1995;125-177.
6. Mohammed-Brahim T., Sarret M., Briand D., Kis-Sion K., Haji L., Bonnaud O., Louër D., Hadjadj A. Phil. Mag. B. 76:1997;193.
7. Campbell I.H., Fauchet P.M. Solid State Commun. 58:1986;739.
8. Paillard V., Puech P., Laguna M.A., Carles R., Kohn B., Huisken F. J. Appl. Phys. 86:1991;1921.
9. Paillard V., Puech P., Laguna M.A., Temple-Boyer P., Caussat B., Couderc J.P., Maudit B. Appl. Phys. Lett. 73:(12):1998;1718-1720.
10. Bennrakkad M.S., Benitez M.A., Esteve J., Lopez-Villegas J.M., Samitier J., Morante J.R. J. Micromech. Microeng. 5:1995;132-135.
11. Boucinha M., Chu V., Conde J.P. Appl. Phys. Lett. 73:1998;502.
12. Fairfield J.M., Masters B.J. J. Appl. Phys. 38:1967;3148.
13. Aoucher M., Mohammed-Brahim T., Fortin B. J. Appl. Phys. 79:1996;7041.