Argon ion-dissipated energy on atomic driving in zinc-VIA films growth

Solid State Communications

Volumn 137, Issue 8, 2006, Pages 413-416

  Ma, Z Q ^a   Li, W ^a   Wang, D M ^a   Zhao, Z X ^a   Wang, Y ^a   Yang, W J ^a   Zhao, W G ^a  

^a SHANGHAI UNIVERSITY   (China)

Author keywords

A. Semiconductors; A. Zinc compounds; B. Epitaxy; C. Energy dissipation

Indexed keywords

ARGON; EPITAXIAL GROWTH; FILM GROWTH; MONOLAYERS; SEMICONDUCTOR MATERIALS; ZINC COMPOUNDS;

ATOMIC DISPLACEMENTS; ENERGY INTERVAL; ENERGY WINDOW; RECTILINEAR TRAJECTORIES;

ENERGY DISSIPATION;

EID: 32044441432     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2005.12.031     Document Type: Article

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