Investigation on structural properties of ZnSe, CdTe, and ZnTe films grown by ionized cluster beam epitaxy

Journal of Crystal Growth

Volumn 187, Issue 3-4, 1998, Pages 387-390

  Feng, J Y ^a   Xie, J Q ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

CdTe; Ionized cluster beam epitaxy; ZnSe; ZnTe

Indexed keywords

EPITAXIAL GROWTH; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SELENIUM COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS;

IONIZED CLUSTER BEAM EPITAXY;

SEMICONDUCTING TELLURIUM COMPOUNDS;

EID: 0032474139     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(97)00856-7     Document Type: Article

References (11)

1. A. Ishibashi, IEEE J. Selected Topics in Quantum Electronics 1 (1995) 741.
2. D. Eason, J. Ren, Z. Yu, C. Huges, N.A. El-Masry, J.W. Cook Jr., J.F. Schetzina, J. Crystal Growth 150 (1995) 718.
3. M.Y. Yeh, C.C. Hu, G.L. Lin, M.K. Lee, Thin Solid Films 215 (1992) 142.
4. R. Kinura, M. Konagai, K. Takahashi, J. Crystal Growth 116 (1992) 283.
5. Sz. Fujita, Y. Kawakami, Sg. Fujita, J. Crystal Growth 164 (1996) 196.
6. H. Nishino, T. Saito, Y. Nishijima, J. Crystal Growth 165 (1996) 227.
7. M.V. Ortenberg, Adv. Solid State Phys. 31 (1991) 261.
8. I. Yamada, G.H. Takaoka, Jpn. J. Appl. Phys. 32 (1993) 2121.
9. I. Yamada, H. Inokawa, T. Takagi, J. Appl. Phys. 56 (1984) 2746.
10. M. Shinohara, F. Ohtani, O. Ishiyama, M. Asari, J. Saraie, Nucl. Instr. and Meth. B 99 (1995) 576.
11. J.Q. Xie, Y. Zheng, J.Y. Feng, Nucl. Instr. and Meth. B 122 (1997) 239.