Sketching of preferred energy regime for ion beam assisted epitaxy

Applied Surface Science

Volumn 137, Issue 1-3, 1999, Pages 184-190

  Ma, Z Q ^a,b   Zheng, Y F ^a   Liu, B X ^b  

^a XINJIANG UNIVERSITY   (China)

^b TSINGHUA UNIVERSITY   (China)

Author keywords

Atomic displacement on surface; Energy window; Germanium; Ion solid interaction

Indexed keywords

AMORPHOUS FILMS; CRYSTAL DEFECTS; EPITAXIAL GROWTH; ION BEAMS; MONOLAYERS; SEMICONDUCTING FILMS; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR GROWTH;

ION BEAM ASSISTED EPITAXY;

FILM GROWTH;

EID: 0032762114     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(98)00480-2     Document Type: Article

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