Growth of HfSiOx films by vapor-liquid hybrid deposition utilizing Si(OC2H5)4/Hf(tOC 4H9)4 multilayer adsorption

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 44, Issue 46-49, 2005, Pages

  Hojo, Daisuke ^a   Xuan, Yi ^a   Yasuda, Tetsuji ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Adsorption; ALD; Deposition; HfSiO x; High k dielectrics; Hydrolysis; MISFET; Vapor liquid hybrid deposition

Indexed keywords

ADSORPTION; FIELD EFFECT TRANSISTORS; FILM GROWTH; HYDROLYSIS; MULTILAYERS;

ALD; CHANNEL MOBILITY; VAPOR-LIQUID HYBRID DEPOSITION;

HAFNIUM COMPOUNDS;

EID: 31944447628     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.44.L1433     Document Type: Article

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