Effect of the dielectric thickness and the metal deposition technique on the mobility for HfO2/TaN NMOS devices

Microelectronic Engineering

Volumn 80, Issue SUPPL., 2005, Pages 86-89

  Trojman, L ^a,c   Ragnarsson, L A ^a   Pantisano, L ^a   Lujan, G S ^a,c   Houssa, M ^a   Schram, T ^a   Cubaynes, F ^b   Schaekers, M ^a   Van Ammel, A ^a   Groeseneken, G ^a,c   De Gendt, S ^a,c   Heyns, M ^a  

^a IMEC   (Belgium)

^b PHILIPS RESEARCH LABORATORIES   (Netherlands)

^c UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

High metal gate MOS transistor; Metal deposition; Mobility reduction; Oxide thickness; Screening effect

Indexed keywords

CARRIER MOBILITY; DEPOSITION; DIELECTRIC FILMS; ELECTRON SCATTERING; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; POLYSILICON; SILICA; TANTALUM COMPOUNDS; THICKNESS MEASUREMENT;

ATOMIC LAYER DEPOSITION (ALD); HIGH Κ-METAL GATE MOS TRANSISTORS; METAL DEPOSITION; MOBILITY REDUCTION; OXIDE THICKNESS; REMOTE CHARGE SCATTERING (RCS); SCREENING EFFECTS;

MOSFET DEVICES;

EID: 21144474309     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2005.04.107     Document Type: Conference Paper

References (11)

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