Materials issues of NI fully silicided (fusi) gates for CMOS applications

Proceedings - Electrochemical Society

Volumn PV 2005-05, Issue , 2005, Pages 225-232

  Kittl, J A ^b   Lauwers, A ^a   Pawlak, M A ^a   Demeurisse, C ^a   Anil, K G ^a   Veloso, A ^a   Van Dal, M J H ^c   Schram, T ^c   Brijs, B ^a   Kaiser, M ^c   Kubicek, S ^a   Cunniffe, J ^a   Verbeeck, R ^a   Vrancken, C ^a   Biesemans, S ^a   Maex, K ^a  

^a IMEC   (Belgium)

^b TEXAS INSTRUMENTS   (Belgium)

^c PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; FERMI LEVEL; RAPID THERMAL ANNEALING; SEMICONDUCTOR DOPING; SILICON; X RAY DIFFRACTION ANALYSIS;

FLAT-BAND VOLTAGES; NI-SILICIDE PHASES;

NICKEL;

EID: 31844449195     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

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