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Volumn 5941, Issue , 2005, Pages 1-7

Remote temperature mapping of high-power InGaN/GaN MQW flip-chip design LEDs

Author keywords

Blue LEDs; IR microscopy; Multiple quantum wells; Nitrides; Temperature micro mapping

Indexed keywords

FLIP CHIP DEVICES; GALLIUM NITRIDE; HEATING; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; THERMAL CONDUCTIVITY;

EID: 31844439300     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.618297     Document Type: Conference Paper
Times cited : (18)

References (12)
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    • Y. Xi and E. F. Schubert, "Junction-temperature measurement in GaN ultraviolet light-emitting diodes using diode forward voltage method", Appl. Phys. Let. 85, 2163-2165, (2004).
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    • Xi, Y.1    Schubert, E.F.2
  • 3
    • 9144253970 scopus 로고    scopus 로고
    • Measurement of temperature profiles on visible light-emitting diodes by use of a nematic liquid crystal and an infrared laser
    • Jeong Park, Moowhan Shin, Chin C. Lee, "Measurement of temperature profiles on visible light-emitting diodes by use of a nematic liquid crystal and an infrared laser", Optics Letters 29, 2656-2658, (2004).
    • (2004) Optics Letters , vol.29 , pp. 2656-2658
    • Park, J.1    Shin, M.2    Lee, C.C.3
  • 4
    • 4344661142 scopus 로고    scopus 로고
    • Temperature measurement of visible light-emitting diodes using nematic liquid crystal thermography with laser illumination
    • Chin C.Lee, Joeng Parck "Temperature measurement of visible light-emitting diodes using nematic liquid crystal thermography with laser illumination", IEEE Photonic Thech. Lett. 16, 1706-1708, (2004).
    • (2004) IEEE Photonic Thech. Lett. , vol.16 , pp. 1706-1708
    • Lee, C.C.1    Parck, J.2
  • 5
    • 0004096435 scopus 로고    scopus 로고
    • Direct imaging of the spectral emission characteristic of an InGaN/GaN-ultraviolet light-emitting diode by highly spectrally and spatially resolved electroluminescence and photoluminescence microscopy
    • Peter Fischer, Jurgen Christen, Margit Zacharias, Veit Schwegler, Chistoph Kirchner, Markus Kamp, "Direct imaging of the spectral emission characteristic of an InGaN/GaN-ultraviolet light-emitting diode by highly spectrally and spatially resolved electroluminescence and photoluminescence microscopy", Appl. Phys. Lett. 75, 3440-3442, (1999).
    • (1999) Appl. Phys. Lett. , vol.75 , pp. 3440-3442
    • Fischer, P.1    Christen, J.2    Zacharias, M.3    Schwegler, V.4    Kirchner, C.5    Kamp, M.6
  • 8
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    • High resolution 'vision' of dynamic electron processes in semiconductor devices
    • V. K. Malyutenko. "High resolution 'vision' of dynamic electron processes in semiconductor devices", Mat. Res. Soc. Simp. Proc.744, M4.10.1-M.4.10.6, (2003).
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    • Malyutenko, V.K.1
  • 11
    • 2542504576 scopus 로고    scopus 로고
    • Optical evidence of an electrothermal degradation of InGaN-based light-emitting diodes during electrical stress
    • M. Pavesi, M. Manfredi, G. Meneghesso, S. Levada, E. Zanoni, S. Du and I. Eliashevich, "Optical evidence of an electrothermal degradation of InGaN-based light-emitting diodes during electrical stress", Appl. Phys. Lett. 84, 3403-3405, (2004).
    • (2004) Appl. Phys. Lett. , vol.84 , pp. 3403-3405
    • Pavesi, M.1    Manfredi, M.2    Meneghesso, G.3    Levada, S.4    Zanoni, E.5    Du, S.6    Eliashevich, I.7


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.