-
1
-
-
79956037932
-
Self-heating effects at high pump currents in deep ultraviolet light-emitting diodes at 324 nm
-
A. Chitnis, J. Sun, V. Mandavilli, R. Pachipulusu, S. Wu, M. Gaevski, V. Adivarahan, J. P. Zhang, M. Asif Khan, A. Sarua and M. Kuball, "Self-heating effects at high pump currents in deep ultraviolet light-emitting diodes at 324 nm", Appl. Phys. Lett. 81, 3491-3493, (2002).
-
(2002)
Appl. Phys. Lett.
, vol.81
, pp. 3491-3493
-
-
Chitnis, A.1
Sun, J.2
Mandavilli, V.3
Pachipulusu, R.4
Wu, S.5
Gaevski, M.6
Adivarahan, V.7
Zhang, J.P.8
Khan, M.A.9
Sarua, A.10
Kuball, M.11
-
2
-
-
7044233214
-
Junction-temperature measurement in GaN ultraviolet light-emitting diodes using diode forward voltage method
-
Y. Xi and E. F. Schubert, "Junction-temperature measurement in GaN ultraviolet light-emitting diodes using diode forward voltage method", Appl. Phys. Let. 85, 2163-2165, (2004).
-
(2004)
Appl. Phys. Let.
, vol.85
, pp. 2163-2165
-
-
Xi, Y.1
Schubert, E.F.2
-
3
-
-
9144253970
-
Measurement of temperature profiles on visible light-emitting diodes by use of a nematic liquid crystal and an infrared laser
-
Jeong Park, Moowhan Shin, Chin C. Lee, "Measurement of temperature profiles on visible light-emitting diodes by use of a nematic liquid crystal and an infrared laser", Optics Letters 29, 2656-2658, (2004).
-
(2004)
Optics Letters
, vol.29
, pp. 2656-2658
-
-
Park, J.1
Shin, M.2
Lee, C.C.3
-
4
-
-
4344661142
-
Temperature measurement of visible light-emitting diodes using nematic liquid crystal thermography with laser illumination
-
Chin C.Lee, Joeng Parck "Temperature measurement of visible light-emitting diodes using nematic liquid crystal thermography with laser illumination", IEEE Photonic Thech. Lett. 16, 1706-1708, (2004).
-
(2004)
IEEE Photonic Thech. Lett.
, vol.16
, pp. 1706-1708
-
-
Lee, C.C.1
Parck, J.2
-
5
-
-
0004096435
-
Direct imaging of the spectral emission characteristic of an InGaN/GaN-ultraviolet light-emitting diode by highly spectrally and spatially resolved electroluminescence and photoluminescence microscopy
-
Peter Fischer, Jurgen Christen, Margit Zacharias, Veit Schwegler, Chistoph Kirchner, Markus Kamp, "Direct imaging of the spectral emission characteristic of an InGaN/GaN-ultraviolet light-emitting diode by highly spectrally and spatially resolved electroluminescence and photoluminescence microscopy", Appl. Phys. Lett. 75, 3440-3442, (1999).
-
(1999)
Appl. Phys. Lett.
, vol.75
, pp. 3440-3442
-
-
Fischer, P.1
Christen, J.2
Zacharias, M.3
Schwegler, V.4
Kirchner, C.5
Kamp, M.6
-
6
-
-
20144389360
-
Junction and carrier temperature measurement in deep-ultraviolet light-emitting diodes using three different methods
-
Y.Xi, J-Q.Xi, Th.Gessmann, J.M.Shah, J.M.Kim, E.F.Schubert, A.J.Fischer, M.H.Crawford, K.H.A.Bogart, A.A.Allerman, "Junction and carrier temperature measurement in deep-ultraviolet light-emitting diodes using three different methods", Appl.Phys.Lett. 86, 1907-1909, (2005).
-
(2005)
Appl.Phys.Lett.
, vol.86
, pp. 1907-1909
-
-
Xi, Y.1
Xi, J.-Q.2
Gessmann, Th.3
Shah, J.M.4
Kim, J.M.5
Schubert, E.F.6
Fischer, A.J.7
Crawford, M.H.8
Bogart, K.H.A.9
Allerman, A.A.10
-
7
-
-
3242796630
-
-
Veit Schwegler, Matthias Seyboth, Sven Schad, Marcus Scherer, Cristoph Kirghner, Markus Kamp, Ulrich Stempfle, Wolfgang Limmer, and Rolf Sauer, "MRS Internet J. Nitride Semiconductor Res., 5S1, F99W11.18, (2000)
-
(2000)
MRS Internet J. Nitride Semiconductor Res.
, vol.5 S1
-
-
Schwegler, V.1
Seyboth, M.2
Schad, S.3
Scherer, M.4
Kirghner, C.5
Kamp, M.6
Stempfle, U.7
Limmer, W.8
Sauer, R.9
-
8
-
-
31844454388
-
High resolution 'vision' of dynamic electron processes in semiconductor devices
-
V. K. Malyutenko. "High resolution 'vision' of dynamic electron processes in semiconductor devices", Mat. Res. Soc. Simp. Proc.744, M4.10.1-M.4.10.6, (2003).
-
(2003)
Mat. Res. Soc. Simp. Proc.
, vol.744
-
-
Malyutenko, V.K.1
-
9
-
-
4043159064
-
AlGaN-based 280 nm light-emitting diodes with continuous wave powers in excess of 1.5 mW
-
W. H. Sun, J. P. Zhang, V. Adiravahan, A. Chitnis, M. Shatalov, S. Wu. Mandavilli, J. W. Yang, and M. A. Khan, "AlGaN-based 280 nm light-emitting diodes with continuous wave powers in excess of 1.5 mW", Appl. Phys. Lett. 85, 531-533, 2004.
-
(2004)
Appl. Phys. Lett.
, vol.85
, pp. 531-533
-
-
Sun, W.H.1
Zhang, J.P.2
Adiravahan, V.3
Chitnis, A.4
Shatalov, M.5
Mandavilli, S.Wu.6
Yang, J.W.7
Khan, M.A.8
-
10
-
-
0038311819
-
Heat transfer mapping in 3-5 μm light emitting structures
-
V. K. Malyutenko, O. Yu. Malyutenko, A. Dazzi, N. Gross, and J.-M. Ortega, "Heat transfer mapping in 3-5 μm light emitting structures", Appl. Phys. Lett. 93, 9398-9340, (2003).
-
(2003)
Appl. Phys. Lett.
, vol.93
, pp. 9398-19340
-
-
Malyutenko, V.K.1
Malyutenko, O.Yu.2
Dazzi, A.3
Gross, N.4
Ortega, J.-M.5
-
11
-
-
2542504576
-
Optical evidence of an electrothermal degradation of InGaN-based light-emitting diodes during electrical stress
-
M. Pavesi, M. Manfredi, G. Meneghesso, S. Levada, E. Zanoni, S. Du and I. Eliashevich, "Optical evidence of an electrothermal degradation of InGaN-based light-emitting diodes during electrical stress", Appl. Phys. Lett. 84, 3403-3405, (2004).
-
(2004)
Appl. Phys. Lett.
, vol.84
, pp. 3403-3405
-
-
Pavesi, M.1
Manfredi, M.2
Meneghesso, G.3
Levada, S.4
Zanoni, E.5
Du, S.6
Eliashevich, I.7
-
12
-
-
7044226141
-
Fabrication of high power flip-chip blue and white LEDs operating under high current density
-
D. A. Zakheim, A. L. Zakheim, I. P. Smirnova, S. A. Gurevich V. W. Lundin, E.M.Arakcheeva, M.M.Kulagina, I.V.Rozhansky, A.F.Tsatsulnikov, A.V.Sasharov, A.V.Fomin, E.D.Vasil'eva, G.V.Itkinson, "Fabrication of high power flip-chip blue and white LEDs operating under high current density" Phys.stat. sol.(c)1, 2401-2404, (2004).
-
(2004)
Phys.stat. Sol.(c)
, vol.1
, pp. 2401-2404
-
-
Zakheim, D.A.1
Zakheim, A.L.2
Smirnova, I.P.3
Gurevich, S.A.4
Lundin, V.W.5
Arakcheeva, E.M.6
Kulagina, M.M.7
Rozhansky, I.V.8
Tsatsulnikov, A.F.9
Sasharov, A.V.10
Fomin, A.V.11
Vasil'eva, E.D.12
Itkinson, G.V.13
|