Band gap renormalization and carrier localization effects in InGaN/GaN quantum-wells light emitting diodes with Si doped barriers

Applied Physics Letters

Volumn 88, Issue 4, 2006, Pages 1-3

  Wang, Y J ^a   Xu, S J ^a   Li, Q ^a   Zhao, D G ^b   Yang, H ^b  

^a UNIVERSITY OF HONG KONG   (Hong Kong)

^b INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; DOPING (ADDITIVES); GALLIUM NITRIDE; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

CARRIER RECOMBINATION; DECAY CURVES; PHOTOGENERATED CARRIERS;

LIGHT EMITTING DIODES;

EID: 31544476840     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2168035     Document Type: Article

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