Cleaning method for thickness metrology of SiO2 thin films on Si substrates by heating in atmosphere

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 11, 2005, Pages 8256-8258

  Azuma, Yasushi ^a   Fujimoto, Toshiyuki ^a   Kojima, Isao ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Ellipsometry; Si dioxide (SiO2) film; Surface cleaning; Thickness metrology; X ray photoelectron spectroscopy (XPS)

Indexed keywords

ELLIPSOMETRY; HEATING; SILICA; SURFACE CLEANING; X RAY PHOTOELECTRON SPECTROSCOPY;

SI DIOXIDE FILMS; THICKNESS METROLOGY;

THIN FILMS;

EID: 31544443217     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.44.8256     Document Type: Article

References (10)

1. International Technology Roadmap for Semiconductor, 2003 ed., http://public.itrs.net/
2. M. P. Seah, S. J. Spencer, F. Bensebaa, I. Vickridge, H. Danzebrink, M. Krumrey, T. Gross, W. Oesterle, E. Wendler, B. Rheinländer, Y. Azuma, I. Kojima, N. Suzuki, M. Suzuki, S. Tanuma, D. W. Moon, H. J. Lee, H. M. Cho, H. Y. Chen, A. T. S. Wee, T. Osipowicz, J. S. Pan, W. A. Jordaan, R. Hauert, U. Klotz, C. van der Marel, M. Verheijen, Y. Tamminga, C. Jeynes, P. Bailey, S. Biswas, U. Falke, N. V. Nguyen, D. Chandler-Horowitz, J. R. Ehrstein, D. Muller and J. A. Dura: Surf, Interface Anal. 36 (2004) 1269.
3. M. P. Seah: J. Vac. Sci. Technol. A 22 (2004) 1564.
4. CCQM, Consultative Committee for Amount of Substance-Metrology in Chemistry, http://www.bipm.fr/en/committees/cc/ccqm/
5. D. A. Cole, J. R. Shallenberger, S. W. Novak, R. L. Moore, M. J. Edgell, S. P. Smith, C. J. Hitzman, J. F. Kirchhoff, E. Principe, W. Nieveen, F. K. Huang, S. Biswas, R. J. Bleiler and K. Jones: J. Vac. Sci. Technol. B 18 (2000) 440.
6. H. M. Cho, Y. W. Lee, I. W. Lee, D. W. Moon, B. Y. Kim, H. J. Kim, S. Y. Kim and Y. J. Cho: J. Vac. Sci. Technol. B 19 (2001) 1144.
7. T. Jach, J. A. Dura, N. V. Nguyen, J. Swider, G. Cappelo and C. Richter: Surf. Interface Anal. 36 (2004) 23.
8. J. M. Hill, D. G. Royce, C. S. Fadley, L. F. Wangner and F. J. Grunthaner: Chem. Phys. Lett. 44 (1976) 225.
9. SiO2 are the intensities for Si 2p peaks of bulk SiO2 and Si, respectively.
10. K. Takahashi, H. Nohira, K. Hirose and T. Hattori: Appl. Phys. Lett. 83 (2003) 3422.