Piezoresistive cantilevers using InAs-based 2D heterostructures

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 24, Issue 1-2 SPEC. ISS., 2004, Pages 70-73

  Yamaguchi, H ^a   Miyashita, S ^b   Hirayama, Y ^a,c  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

^b NTT Advanced Technology Corporation   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

GaAs (1 1 1)A; InAs; MEMS; NEMS; Q1D

Indexed keywords

COMPOSITE MICROMECHANICS; ELECTRON ENERGY LEVELS; MAGNETORESISTANCE; PIEZOELECTRIC DEVICES; QUANTUM THEORY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

GAAS (11111)A; INAS; MEMS; NEMS; Q1D;

HETEROJUNCTIONS;

EID: 3142769826     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2004.04.026     Document Type: Conference Paper

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