Thermoelectric properties of Zn0.98Al0.02O thin films prepared by RF magnetron sputtering

Journal of the Ceramic Society of Japan

Volumn 112, Issue 1306, 2004, Pages 327-331

  Ueno, Mika ^a   Yoshida, Yutaka ^a   Takai, Yoshiaki ^a   Yamaguchi, Masataka ^b  

^a NAGOYA UNIVERSITY   (Japan)

^b TOYOTA MOTOR CORPORATION   (Japan)

Author keywords

C axis orientation; N type semiconductor; Phonon scattering; Sputtering; Thermoelectric material; Thin film

Indexed keywords

CARRIER CONCENTRATION; CRYSTAL MICROSTRUCTURE; DEPOSITION; ELECTRIC CONDUCTIVITY; GRAIN SIZE AND SHAPE; HEAT TREATMENT; MAGNETRON SPUTTERING; REDUCTION; SYNTHESIS (CHEMICAL); THERMOELECTRICITY; X RAY DIFFRACTION; ZINC COMPOUNDS;

C-AXIS ORIENTATION; N-TYPE SEMICONDUCTORS; PHONON SCATTERING; THERMOELECTRIC MATERIALS;

THIN FILMS;

EID: 3142764478     PISSN: 09145400     EISSN: None     Source Type: Journal    
DOI: 10.2109/jcersj.112.327     Document Type: Article

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