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High-temperature characteristics and tunability of long-wavelength vertical-cavity semiconductor optical amplifiers
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Kimura, T.1
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1.3-μm GaInNAs monolithic vertical-cavity semiconductor optical amplifier
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E. S. Bjorlin, B. Riou, P. Abraham, J. Piprek, Y. J. Chiu, K. A. Black, A. Keating, and J. E. Bowers, "Long-wavelength vertical-cavity semiconductor optical amplifiers," IEEE J. Quantum Electron., vol. 37, pp. 274-281, Jan. 2001.
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0035935865
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Optically preamplified receiver at 10 Gbit/s using vertical-cavity SOA
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E. S. Bjorlin, J. Geske, and J. E. Bowers, "Optically preamplified receiver at 10 Gbit/s using vertical-cavity SOA," Electron. Lett., vol. 37, no. 24, pp. 1474-1475, Nov. 2001.
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l.3-μm vertical-cavity amplifying switch
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E. S. Bjorlin, J. Piprek, S. Gee, Y. J. Chiu, J. E. Bowers, A. Dahl, and P. Abraham, "l.3-μm vertical-cavity amplifying switch," Opt. Sci. Amer. Trends Opt. Photon., vol. 60, pp. 154-160, July 2001.
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Oct
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E. S. Bjorlin, A. Dahl, J. Piprek, P. Abraham, Y. J. Chiu, and J. E. Bowers, "Vertical-cavity amplifying modulator at 1.3-μm," IEEE Photon. Technol. Lett., vol. 13, pp. 1271-1273, Oct. 2001.
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A proposed vertical-cavity optical repeater for optical inter-board connections
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S. Calvez, A. H. Clark, J. M. Hopkins, P. Merlin, H. D. Sun, M. D. Dawson, T. Jouhti, and M. Pessa, "Amplification and laser action in diode-pumped 1.3-μm GaInNAs vertical-cavity structures," in Proc. IEEE LEOS Annu. Meeting, 2002, pp. 165-166.
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E. S. Bjorlin, B. Riou, A. Keating, P. Abraham, Y. J. Chiu, J. Piprek, and J. E. Bowers, "1.3-μm vertical-cavity amplifier," IEEE Photon. Technol. Lett., vol. 12, pp. 951-953, Aug. 2000.
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J. Piprek, S. Bjorlin, and J. E. Bowers, "Design and analysis of vertical-cavity semiconductor optical amplifiers," IEEE J. Quantum Electron., vol. 37, pp. 127-134, Jan. 2001.
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l.3-μm quantum-well InGaAsP, AlGaInAs, and InGaAsN laser material gain: A theoretical study
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J. C. L. Yong, J. M. Rorison, and I. H. White, "l.3-μm quantum-well InGaAsP, AlGaInAs, and InGaAsN laser material gain: A theoretical study," IEEE J. Quantum Electron., vol. 38, pp. 1553-1564, Dec. 2002.
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A quantitative study of radiative, auger, and defect related recombination processes in 1.3-/spl μ/m GaInNAs-based quantum-well lasers
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R. Fehse, S. Tomic, A. R. Adams, S. J. Sweeney, E. P. O'Reilly, A. Andreev, and H. Riechert, "A quantitative study of radiative, auger, and defect related recombination processes in 1.3-/spl μ/m GaInNAs-based quantum-well lasers," IEEE J. Select. Topics Quantum Electron., vol. 8, pp. 801-810, July-Aug. 2002.
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Long-wavelength vertical-cavity lasers and amplifiers
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A. Karim, S. Bjorlin, J. Piprek, and J. E. Bowers, "Long-wavelength vertical-cavity lasers and amplifiers," IEEE J. Select. Topics Quantum Electron., vol. 6, pp. 1244-1253, Nov.-Dec. 2000.
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Thermal characteristics of optical gain for GaInNAs quantum wells at 1.3 μm
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Nov
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C. K. Kim and Y. H. Lee, "Thermal characteristics of optical gain for GaInNAs quantum wells at 1.3 μm," Appl. Phys. Lett., vol. 79, no. 19, pp. 3038-3040, Nov. 2001.
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