Vertical-cavity amplifying modulator at 1.3 μm

IEEE Photonics Technology Letters

Volumn 13, Issue 12, 2001, Pages 1271-1273

  Bjorlin E S ^a,b   Dahl, A ^a,c   Piprek, J ^a,b   Abraham, P ^a,d   Chiu, Y J ^a,b   Bowers, J E ^a,b  

^a IEEE   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

^c ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^d JDS UNIPHASE   (United States)

Author keywords

Laser amplifiers; Modulation; Optical modulation; Optical pumping; Optical switches; Semiconductor optical amplifiers

Indexed keywords

SEMICONDUCTOR OPTICAL AMPLIFIERS (SOA);

BANDWIDTH; FREQUENCY RESPONSE; LIGHT AMPLIFIERS; LIGHT REFLECTION; OPTICALLY PUMPED LASERS; SEMICONDUCTOR DEVICES;

LIGHT MODULATORS;

EID: 0035676741     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.969878     Document Type: Article

References (9)

1. Single-port laser-amplifier modulator for local access
2. High frequency modulation of strained layer multiple quantum well optical amplifiers
3. Laser diode switch
4. Switching characteristics of laser diode switch
5. Experimental and analytical evaluation of packaged 4 × 4 InGaAsP/InP semiconductor optical amplifier gate switch matrices for optical networks
6. Surface-normal electroabsorption reflection modulators using asymmetric Fabry-Perot structures
7. Vertical-cavity amplifying photonic switch at 1.5 μm
8. Long wavelength vertical-cavity semiconductor optical amplifiers
9. High power 980 nm laser diode for free space communications at high bit rates