Nanotopography impact in shallow-trench isolation chemical mechanical polishing-Analysis method and consumable dependence

Journal of Materials Research

Volumn 19, Issue 6, 2004, Pages 1783-1790

  Park, Jea Gun ^a   Katoh, Takeo ^a   Paik, Ungyu ^a  

^a Hanyang University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ABRASIVES; CERIUM COMPOUNDS; CHEMICAL MECHANICAL POLISHING; COMPOSITION EFFECTS; NANOTECHNOLOGY; SILICON WAFERS; SLURRIES; SPECTRUM ANALYSIS; SURFACE ACTIVE AGENTS; SURFACE TOPOGRAPHY; THICKNESS CONTROL;

CERIA; NANOTOPOGRAPHY; POLISHING PAD HARDNESS; THICKNESS DEVIATION; WAFER MANUFACTURING METHOD;

DIELECTRIC FILMS;

EID: 3142758681     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/JMR.2004.0225     Document Type: Article

References (22)

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