High current (100mA) InP/InGaAs/InP DHBTs with 330 GHz fmax

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2002, Pages 47-50

  Wei, Yun ^a   Lee, Sangmin ^a   Sundararajan, P K ^a   Dahlstrom, Mattias ^a   Urteaga, Miguel ^a   Rodwell, Mark ^a  

^a University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; CURRENT DENSITY; ELECTRIC BREAKDOWN; HEAT RESISTANCE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; THERMODYNAMIC STABILITY;

DOUBLE HETEROJUNCTION BIPOLAR TRANSISTORS (DHBT);

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0036048508     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. HBT MMIC 75 GHz and 78 GHz power amplifiers