Self-assembled GaAs/AlGaAs quantum dots by molecular beam epitaxy and in situ AsBr3 etching

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 23, Issue 3-4 SPEC. ISS., 2004, Pages 384-389

  Rastelli, A ^a   Songmuang, R ^a   Schmidt, O G ^a  

^a MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

Author keywords

AlGaAs; GaAs; Quantum dots; Self assembly

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRONS; ETCHING; GROUND STATE; HAMILTONIANS; MATRIX ALGEBRA; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM;

ALGAAS; GAAS; PHOTOLUMINESCENCE SPECTROSCOPY; SELF-ASSEMBLY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 3142724036     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2004.02.005     Document Type: Conference Paper

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