Micro-Raman and photoluminescence study on n-type 6H-SiC

Materials Science Forum

Volumn 353-356, Issue , 2001, Pages 345-348

  Feng, Z C ^a   Chua, S J ^a,b   Evans, G A ^c   Steeds, J W ^c   Williams, K P J ^d   Pitt, G D ^d  

^a INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^c UNIVERSITY OF BRISTOL   (United Kingdom)

^d RENISHAW PLC   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY OF SOLIDS; NITROGEN; PHONONS; PHOTOLUMINESCENCE; RAMAN SCATTERING; RAMAN SPECTROSCOPY; TEMPERATURE; ULTRAVIOLET SPECTROSCOPY;

INTENSITY RATIO; LONGITUDINAL OPTICAL PHONE MODES; TRANSVERSE OPTICAL PHONE MODES;

SILICON CARBIDE;

EID: 0035119747     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.4028/www.scientific.net/msf.353-356.345     Document Type: Article

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