The effect of ultra-thin Al 2O 3 layers on the dielectric properties of LaAlO 3 thin film on silicon

Semiconductor Science and Technology

Volumn 19, Issue 7, 2004, Pages 935-938

  Yan, L ^a   Kong, L B ^a   Ong, C K ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

FLATBAND VOLTAGE; HIGH TEMPERATURE ANNEALING; SILICON SUBSTRATES;

DIELECTRIC MATERIALS; FIELD EFFECT TRANSISTORS; LANTHANUM COMPOUNDS; LASER PULSES; SILICON; SUBSTRATES; THERMAL EFFECTS; THIN FILMS;

ALUMINA;

EID: 3142715492     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/19/7/027     Document Type: Article

References (11)

1. Geller S and Bala V B 1956 Acta Crystallogr. 9 1019
2. Samara G A 1990J. Appl. Phys. 68 4214
3. Park B E and Ishiwara H 2003 Appl. Phys. Lett. 82 1197
4. Yan L, Lu H B, Tan G T, Chen F, Zhou Y L, Lu W and Chen Z H 2003 Appl. Phys. A 77 721
5. Xiang W F, Lu H B, Van L, Quo H Z, Liu L F, Zhou Y L, Yang G Z, Jiang J C, Cheng H S and Chen Z H 2003 J. Appl. Phys. 93 533
6. Nieminen M, Sajavaara T, Rauhala E, Putkonen M and NiinistÖ L 2001 J. Mater. Chem. 11 2340
7. Sader E, Schmidt H, Hradil K and Wersing W 2001 Supercond. Sci. Technol. 4 371
8. Molodyk A A, Korsakov I E, Novojilov M A, Graboy I E, Kaul A R and Wahl G 2000 Chem. Vapor. Depos. 6 133
9. Devine R A B 2003 J. Appl. Phys. 93 9938
10. Gusev E P, Copel M, Cartier E, Baumvol I J R and Krug C 2000 Appl. Phys. Lett. 76 176
11. Krug C, da Rosa E B O, de Almeida R M C, Morais J, Baumvol I J R, Salgado T D M and Stedile F C 2000 Phys. Rev. Lett. 85 4120