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Volumn 268, Issue 3-4 SPEC. ISS., 2004, Pages 494-498

Depth-resolved luminescence imaging of epitaxial lateral overgrown GaN using ionoluminescence

Author keywords

A1. Cathodoluminescence; A1. Depth resolved; A1. Ionoluminescence; B1. Epitaxial lateral overgrown GaN

Indexed keywords

CATHODOLUMINESCENCE; COMPUTER SIMULATION; DIFFUSION; EPITAXIAL GROWTH; IMAGING TECHNIQUES; IONIZATION; MONTE CARLO METHODS; PHOTOLUMINESCENCE;

EID: 3142705136     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.04.079     Document Type: Conference Paper
Times cited : (3)

References (11)
  • 10
    • 0038254989 scopus 로고    scopus 로고
    • Proceedings of the International Workshop on Nitride Semiconductors (IWN2000) Nagoya, Aichi, Japan
    • M. Hao, W. Wang, P. Li, W. Liu, S.J. Chua, Proceedings of the International Workshop on Nitride Semiconductors (IWN2000) Nagoya, Aichi, Japan, IPAP Conference Series 1, 2000, pp. 312.
    • (2000) IPAP Conference Series , vol.1 , pp. 312
    • Hao, M.1    Wang, W.2    Li, P.3    Liu, W.4    Chua, S.J.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.