Growth of polymorphous/nanocrystalline silicon films deposited by PECVD at 13.56 MHz

Materials Science Forum

Volumn 455-456, Issue , 2004, Pages 532-535

  Raniero, L ^a   Martins, R ^a   Aguas H ^a   Zang, S ^a   Ferreira, I ^a   Pereira, L ^a   Fortunato, E ^a   Boufendi, L ^b  

^a UNIVERSIDADE NOVA DE LISBOA   (Portugal)

^b UNIVERSITÉ D'ORLÉANS   (France)

Author keywords

Nanoclusters; Polymorphous; Semiconductors thin films nanocrystals

Indexed keywords

DEPOSITION; FILM GROWTH; NANOSTRUCTURED MATERIALS; PARAMETER ESTIMATION; PHOTOSENSITIVITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PLASMA THEORY; SUBSTRATES;

DILUTION; NANOCLUSTERS; POLYMORPHOUS FILMS;

THIN FILMS;

EID: 3142691842     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.455-456.532     Document Type: Conference Paper

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