SCOPUS 정보 검색 플랫폼

2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - Digest of Papers

Volumn , Issue , 2003, Pages 122-125

RF-Schottky diodes with Ni silicide for mixer applications

(4) Morschbach, M a Schollhorn C a Oehme, M a Kasper, E a

Author keywords

Aluminum; Circuits; Contact resistance; Cutoff frequency; Mixers; Nickel; Radio frequency; Schottky diodes; Silicides; Silicon

Indexed keywords

ALUMINUM; BALLOONS; CONTACT RESISTANCE; CUTOFF FREQUENCY; DIODES; DOPING (ADDITIVES); ELECTRIC CONTACTS; ELECTRIC RESISTANCE; INTEGRATED CIRCUITS; MIXERS (MACHINERY); NETWORKS (CIRCUITS); NICKEL; NICKEL COMPOUNDS; PHOSPHORUS; SCHOTTKY BARRIER DIODES; SILICIDES; SILICON;

CONTACT MATERIAL; MIXER APPLICATIONS; NI SILICIDE; NICKEL SILICIDE; RADIO FREQUENCIES; SCHOTTKY DIODES; SERIES RESISTANCES;

MONOLITHIC INTEGRATED CIRCUITS;

EID: 3142760234 PISSN: None EISSN: None Source Type: Conference Proceeding
DOI: 10.1109/SMIC.2003.1196685 Document Type: Conference Paper

Times cited : (8)

References (8)

1
- 0003634609
- Springer Verlag, Berlin
- Luy, J.-F. and P. Russer, 'Silicon Based Millimeter-Wave Devices', Springer Verlag, Berlin, 1994.
- (1994) Silicon Based Millimeter-Wave Devices
- Luy, J.-F.¹ Russer, P.²

2
- 0016544875
- Harmonic Mixing with an Antiparallel Diode Pair
- Cohn, M., J.E. Degenford and B.A. Newman, 'Harmonic Mixing with an Antiparallel Diode Pair', IEEE Trans. on Microwave Theory Tech., Vol. MTT23, No. 8, 1975.
- (1975) IEEE Trans. on Microwave Theory Tech. , vol.MTT23 , Issue.8
- Cohn, M.¹ Degenford, J.E.² Newman, B.A.³

3
- 0003640313
- Prentice Hall, New Jersey
- Ludwig, R., and P. Bretchko, 'RF Circuit Design', Prentice Hall, New Jersey, 2000.
- (2000) RF Circuit Design
- Ludwig, R.¹ Bretchko, P.²

4
- 0008665014
- Monolithic Integrated Coplanar 77GHz SIMMWIC Mixer
- Prague
- Strohm, K. M., J.-F. Luy, C. Rheinfelder, F.J. Schmückle and W. Heinrich, 'Monolithic Integrated Coplanar 77GHz SIMMWIC Mixer', Proc. of the 26^th European Microwave Conf., pp. 293-296, Prague, 1996.
- (1996) Proc. of the 26^th European Microwave Conf. , pp. 293-296
- Strohm, K.M.¹ Luy, J.-F.² Rheinfelder, C.³ Schmückle, F.J.⁴ Heinrich, W.⁵

5
- 20344382139
- 100GHz S-Parameter Measurements of Monolithically Integrated Silicon Impatt Diodes
- Schöllhorn, C., W. Zhao, M. Morschbach, M. Oehme, E. Kasper, J. Hasch and H. Irion, '100GHz S-Parameter Measurements of Monolithically Integrated Silicon Impatt Diodes', Proc. of the Asia-Pacific Microwave Conference, Kyoto, Japan, 2002.
- Proc. of the Asia-Pacific Microwave Conference, Kyoto, Japan, 2002
- Schöllhorn, C.¹ Zhao, W.² Morschbach, M.³ Oehme, M.⁴ Kasper, E.⁵ Hasch, J.⁶ Irion, H.⁷

6
- 0035444020
- Ni/Ag Metallization for SiGe HBTs using a Ni Silicide Contact
- Eberhardt, J. and E. Kasper, 'Ni/Ag Metallization for SiGe HBTs using a Ni Silicide Contact', Semiconductor Science and Technology, 16, pp.47-49, 2001.
- (2001) Semiconductor Science and Technology , vol.16 , pp. 47-49
- Eberhardt, J.¹ Kasper, E.²

7
- 0012683263
- VEB Deutscher Verlag, Leipzig
- H.-F. Hadamovsky, 'Werkstoffe der Halbleitertechnik', VEB Deutscher Verlag, Leipzig, 1990.
- (1990) Werkstoffe der Halbleitertechnik
- Hadamovsky, H.-F.¹

8
- 0026679924
- AN IMPROVED DE-EMBEDDING TECHNIQUE FOR ON-WAFER HIGH-FREQUENCY CHARACTERIZATION
- M. C. A. M. Koolen, J. A. M. Geelen, M. P. J. G. Versleijen, 'AN IMPROVED DE-EMBEDDING TECHNIQUE FOR ON-WAFER HIGH-FREQUENCY CHARACTERIZATION', IEEE Bipolar Circuits and Technology Meeting, vol.1, pp. 188-191, 1991
- (1991) IEEE Bipolar Circuits and Technology Meeting , vol.1 , pp. 188-191
- Koolen, M.C.A.M.¹ Geelen, J.A.M.² Versleijen, M.P.J.G.³

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.