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Volumn 43, Issue 4 B, 2004, Pages 1944-1946

Thermal annealing effect in GaInNAs thin films estimated by fluorescence X-ray absorption fine structure spectroscopy

Author keywords

Crystal structure; GaInNAs; III V compound semiconductor; Molecular beam epitaxy; Thermal annealing; X ray absorption fine structure

Indexed keywords

ABSORPTION; ANNEALING; CRYSTAL STRUCTURE; DIFFUSION; ELECTRON CYCLOTRON RESONANCE; FLUORESCENCE; MOLECULAR BEAM EPITAXY; THERMAL EFFECTS; X RAYS;

GAINNAS; III-V COMPOUND SEMICONDUCTOR; THERMAL ANNEALING; X-RAY ABSORPTION FINE STRUCTURE;

THIN FILMS;

EID: 3142645316 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/JJAP.43.1944 Document Type: Conference Paper

Times cited : (5)

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