Characteristics of contact etching damage affecting the contact resistance of AlSiCu/TiN/Ti/p+Si

International Symposium on Plasma Process-Induced Damage, P2ID, Proceedings

Volumn , Issue , 1997, Pages 73-76

  Miyamoto, Kyoko ^a   Sugihara, Kohei ^a   Asai, Akira ^a  

^a Matushita Electronics Corp   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC SPECTROSCOPY; CHARGE CARRIERS; CRYSTAL DEFECTS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC RESISTANCE; INTERFACES (MATERIALS); PLASMAS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON COMPOUNDS; SUBSTRATES; TITANIUM NITRIDE; TRANSMISSION ELECTRON MICROSCOPY;

CAPACITIVELY COUPLED PLASMA (CCP); CONTACT ETCHING DAMAGE;

PLASMA ETCHING;

EID: 0030644615     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)