Highly strained InxGa1-xP/GaP quantum wells grown on GaP and on an Inx/2Ga1-x/2P buffer layer by gas-source molecular beam epitaxy

Journal of Crystal Growth

Volumn 165, Issue 3, 1996, Pages 210-214

  Bi, W G ^a   Tu, C W ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARACTERIZATION; CRYSTAL LATTICES; CRYSTAL STRUCTURE; MOLECULAR BEAM EPITAXY; OPTICAL VARIABLES MEASUREMENT; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; X RAY CRYSTALLOGRAPHY;

BUFFER LAYER; GALLIUM PHOSPHIDE; GAS SOURCE MOLECULAR BEAM EPITAXY; INDIUM GALLIUM PHOSPHIDE; MATERIAL QUALITY; SATELLITE PEAKS;

EPITAXIAL GROWTH;

EID: 0030216991     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(96)00185-6     Document Type: Article

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