Analysis of the R0A product in n+p and n+n-p Hg1-xCdxTe photodiodes

Semiconductor Science and Technology

Volumn 11, Issue 7, 1996, Pages 1077-1084

  Dhar, V ^a   Ashokan, R ^a   Khan, Z A D ^a   Basu, P K ^a  

^a SOLID STATE PHYSICS LABORATORY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRON TUNNELING; EPITAXIAL GROWTH; HETEROJUNCTIONS; ION IMPLANTATION; PERFORMANCE; PHOTODIODES; SEMICONDUCTING CADMIUM COMPOUNDS; THIN FILMS;

EPILAYERS;

SEMICONDUCTOR DIODES;

EID: 0030196383     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/11/7/019     Document Type: Article

References (19)

1. Bubulac L O 1991 Proc. SPIE 1484 67-71
2. Bubulac L O, Tennant W E, Riedel R A and Magee T J 1982 J. Vac. Sci. Technol. 21 251-4
3. Destefanis G L 1991 Semicond. Sci. Technol. 6 C88-92
4. Gonzalez C, Centeno J M and Sangrador J 1991 Infrared Phys. 31 69-72
5. Schacham S E and Finkman E 1989 J. Vac. Sci. Technol. A 7 387-90
6. Nemirovsky Y and Rosenfeld Y 1988 J. Appl. Phys. 63 2435-9
7. Reine M B, Sood A K and Tredwell T J 1981 Semiconductors and Semimelals vol 18, ed R K Willardson and A C Beer (New York: Academic) ch 6
8. Rogalski A 1988 Progr. Quantum Electron. 12 87-289
9. Hansen G L, Schmit J L and Casselman T N 1982 J. Appl. Phys. 53 7099-101
10. Blakemore J S 1962 Semiconductor Statistics (London: Pergamon) ch 3
11. Casselman T N 1981 J. Appl. Phys. 52 848-54
12. Lopes V C, Syllaios A J and Chen M C 1993 Semicond. Sci. Technol. 8 824-41
13. McKelvey J P 1969 Solid State and Semiconductor Physics (New York: Harper and Row) p 350
14. Mordowicz D, Zemel A, Zussman A, Eger D and Goldstein Y 1987 Appl. Phys. Lett. 51 2239-41
15. Graft R D, Carlson F F, Dinann J H, Boyd P R and Longshore R E 1983 J. Vac. Sci. Technol. A 3 1696-9
16. Sarusi G, Zemel A, Eger D, Ron S and Shapira Y 1992 J. Appl. Phys. 72 2312-21
17. Finkman E and Schacham S E 1990 Opt. Eng. 29 800-3
18. Fraenkel A, Schacham S E, Bahir G and Finkman E 1986 J. Appl. Phys. 60 3916-22
19. Fastow R and Nemirovsky Y 1989 J. Appl. Phys. 66 1705-10