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Volumn 43, Issue 4 B, 2004, Pages 1717-1722
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Intelligent BSIM4 model parameter extraction for sub-100 nm MOSFET era
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Author keywords
BSIM4; Compact model; DC characteristics; Intelligent methodology; Modeling and simulation; MOSFET; Parameter extraction
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Indexed keywords
ALGEBRA;
CMOS INTEGRATED CIRCUITS;
COSTS;
DATA REDUCTION;
ELECTRIC POTENTIAL;
HETEROJUNCTION BIPOLAR TRANSISTORS;
MATHEMATICAL MODELS;
OPTIMIZATION;
PARAMETER ESTIMATION;
RANDOM ACCESS STORAGE;
TRANSCONDUCTANCE;
VLSI CIRCUITS;
BSIM4;
DC CHARACTERISTICS;
INTELLIGENT METHODOLOGY;
MODELING AND SIMULATION;
PARAMETER EXTRACTION;
MOSFET DEVICES;
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EID: 3142568981
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/JJAP.43.1717 Document Type: Conference Paper |
Times cited : (48)
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References (16)
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