Electron transition energy for vertically coupled InAs/GaAs semiconductor quantum dots and rings

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 4 B, 2004, Pages 2104-2109

  Li, Yiming ^a,b   Lu, Hsiao Mei ^c  

^a NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^c University of Illinois at Chicago   (United States)

Author keywords

Electron transition energy; Magnetic field effects; Modeling and simulation; Semiconductor artificial molecules; Vertically coupled quantum dots; Vertically coupled quantum rings

Indexed keywords

CHARGE TRANSFER; COMPUTER SIMULATION; DIAMAGNETISM; ELECTRON TRANSITIONS; ELECTRON TUNNELING; ELECTRONIC STRUCTURE; GROUND STATE; LIGHT EMITTING DIODES; MAGNETIC FIELD EFFECTS; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS;

SEMICONDUCTOR ARTIFICIAL MOLECULES; SEMICONDUCTOR NANOSTRUCTURES; VERTICALLY COUPLED QUANTUM DOTS; VERTICALLY COUPLED QUANTUM RINGS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 3142539062     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.2104     Document Type: Conference Paper

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