Transport properties of a single pair of coupled self-assembled InAs quantum dots

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 19, Issue 1-2, 2003, Pages 210-214

  Ota, T ^a   Hatano, T ^a   Tarucha, S ^a,c,d   Song, H Z ^b   Nakata, Y ^b   Miyazawa, T ^b   Ohshima, T ^b   Yokoyama, N ^b  

^a NTT CORPORATION   (Japan)

^b FUJITSU LABORATORIES LTD   (Japan)

^c UNIVERSITY OF TOKYO   (Japan)

^d Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

Artificial molecule; Coulomb oscillation; Coupled quantum dots; InAs self assembled quantum dots

Indexed keywords

ELECTRIC CONDUCTANCE; ELECTRON TRANSPORT PROPERTIES; SELF ASSEMBLY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS;

LOCALIZATION;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0042922738     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(03)00318-7     Document Type: Conference Paper

References (13)

1. Tarucha S., Austing D.G., Honda T., van der Hage R.J., Kouwenhoven L.P. Phys. Rev. Lett. 77:1996;3613.
2. Austing D.G., Honda T., Muraki K., Tokura Y., Tarucha S. Physica B. 249-251:1998;206.
3. Amaha S., Austing D.G., Tokura Y., Muraki K., Ono K., Tarucha S. Solid State Commun. 119:2001;183.
4. Ono K., Austing D.G., Tokura Y., Tarucha S. Science. 297:2002;1313.
5. Pi M., Emperador A., Barranco M., Garcias F., Muraki K., Tarucha S., Austing D.G. Phys. Rev. Lett. 87:2001;066801.
6. Austing D.G., Tarucha S., Main P.C., Henini M., Stoddart S.T., Eaves L. Appl. Phys. Lett. 75:1999;671.
7. Schmidt K.H., Versen M., Kunze U., Reuter D., Wieck A.D. Phys. Rev. B. 62:2000;15879.
8. Bayer M., Hawrylak P., Hinzer K., Fafard S., Korkusinski M., Wasilewski Z.R., Stern O., Forchel A. Science. 291:2001;451.
9. Drexler H., Leonard D., Hansen W., Kotthaus J.P., Petroff P.M. Phys. Rev. Lett. 73:1994;2252.
10. Narihiro M., Yusa G., Nakamura Y., Noda T., Sakaki H. Appl. Phys. Lett. 70:1997;105.
11. Nakata Y., Sugiyama Y., Futatsugi T., Yokoyama N. J. Crystal Growth. 175-176:1997;713.
12. Wojs A., Hawrylak P. Phys. Rev. B. 53:1996;10841.
13. For a spacer layer of 11.5 nm, it was shown that the pairing probability is not 1.0 but higher than 0.9. See, Q. Xie, et al., Phys. Rev. Lett. 75 (1995) 2542.