Room-temperature gas-sensing ability of PtSi/porous Si Schottky junctions

IEEE Sensors Journal

Volumn 6, Issue 1, 2006, Pages 146-150

  Raissi, Farshid ^a   Mirzakuchaki, Sattar ^b   Jalili, Hassan Moheb ^a,d   Erfanian, Alireza ^a,c  

^a K N TOOSI UNIVERSITY OF TECHNOLOGY   (Iran)

^b IRAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Iran)

^c MALEK ASHTAR UNIVERSITY OF TECHNOLOGY   (Iran)

^d Aviation Industry Research Center

Author keywords

Gas sensor; Porous Si; PtSi Schottky junction; Room temperature gas sensing

Indexed keywords

ELECTRIC FRINGING FIELDS; POROUS SI; REVERSE BIAS VOLTAGES;

DIODES; ELECTRIC FIELDS; ELECTRIC POTENTIAL;

CHEMICAL SENSORS;

EID: 31344476874     PISSN: 1530437X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSEN.2005.854146     Document Type: Article

References (11)

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