Highly sensitive near IR detectors using n-type porous Si

Sensors and Actuators, A: Physical

Volumn 104, Issue 2, 2003, Pages 117-120

  Raissi, Farshid ^a   Sheeni, Naveed A ^b  

^a K N TOOSI UNIVERSITY OF TECHNOLOGY   (Iran)

^b AMIRKABIR UNIVERSITY OF TECHNOLOGY   (Iran)

Author keywords

Avalanche photodiodes; IR detectors; Porous Si; PtSi Schottky detectors

Indexed keywords

AVALANCHE DIODES; CURRENT VOLTAGE CHARACTERISTICS; ETCHING; PHOTODIODES; PORE SIZE; POROUS SILICON; ULTRAVIOLET RADIATION;

ANODIC ETCHING;

INFRARED DETECTORS;

EID: 0037446421     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0924-4247(02)00435-1     Document Type: Article

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