Stable single-mode operation of an 850-nm VCSEL with a higher order mode absorber formed by shallow Zn diffusion

IEEE Photonics Technology Letters

Volumn 13, Issue 4, 2001, Pages 266-268

  Chen, C C ^a   Liaw, S J ^a   Yang, Y J ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

850 nm vertical cavity surface emitting lasers; Mode suppression ratio; Single mode; Zn diffusion

Indexed keywords

BANDWIDTH; DIFFUSION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MODULATION; SEMICONDUCTOR LASERS; ZINC;

MODE SUPRESSION RATIO; VERTICAL-CAVITY SURFACE-EMITTING LASERS (VCSEL);

LASER MODES;

EID: 0035304834     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.917820     Document Type: Article

References (13)

1. F. Koyama, S. Kinoshita, and K. Iga, "Room-temperature continuous wave lasing characteristic of a GaAs vertical cavity surface-emitting laser," Appl. Phys. Lett., vol. 55, pp. 221-222, 1989.
2. J. L. Jewell, A. Scherer, S. L. McCall, Y. H. Yee, S. Walker, J. P. Harbison, and L. T. Florez, "Low threshold electrically pumped vertical-cavity surface emitting microlasers," Electron. Lett., vol. 25, pp. 1123-1125, 1989.
3. K. L. Lear, A. Mar, K. D. Choquette, S. P. Kilcoyne, R. P. Schneider, Jr., and K. M. Geib, "High-frequency modulation of oxide-confined vertical cavity surface emitting lasers," Electron. Lett., vol. 32, pp. 457-458, 1996.
4. Y. Satuby and M. Orenstein, "Limits of the modulation response of a single-mode proton implanted VCSEL," IEEE Photon. Technol. Lett., vol. 10, pp. 760-762, 1998.
5. R. S. Geel, S. W. Corzine, J. W. Scott, D. B. Young, and L. A. Coldren, "Low threshold planarized vertical-cavity surface-emitting lasers," IEEE Photon. Technol. Lett., vol. 2, pp. 234-236, 1990.
6. Y. A. Wu, G. S. Li, W. Yuen, C. Caneau, and C. J. Chang-Hasnain, "High-yield processing and single-mode operation of passive antiguide region vertical-cavity lasers," IEEE J. Select. Topics Quantum Electron., vol. 3, pp. 429-434, 1997.
7. M. Grabherr, R. Jager, R. Michalzik, B. Weigl, G. Reiner, and K. J. Ebeling, "Efficient single-mode oxide-confined GaAs VCSEL's emitting in the 850-nm wavelength regime," IEEE Photon. Technol. Lett., vol. 9, pp. 1304-1306, 1997.
8. H. J. Unold, M. Grabherr, F. Eberhard, F. Mederer, R. Jager, M. Reidl, and K. J. Ebeling, "Increased-area oxidised single-fundanental mode VCSEL with self-aligned shallow etched surface relief," Electron. Lett., vol. 35, pp. 1340-1341, 1999.
9. T. G. Dziura, Y. J. Yang, R. Fernandez, and S. C. Wang, "Single mode surface emitting laser using partial mirror disordering," Electron. Lett., vol. 29, pp. 1236-1237, 1993.
10. P. D. Floyd, M. G. Peters, L. A. Coldren, and J. L. Merz, "Suppression of higher-order transverse modes in vertical-cavity lasers by impurity-induced disordering," IEEE Photon. Technol. Lett., vol. 7, pp. 1388-1390, 1995.
11. cursive Greek chi As," Appl. Phys. Lett., vol. 47, pp. 1193-1195, 1985.
12. R. G. Hunsperger, Integrated Optics: Theory and Technology. Hong Kong: Springer-Verlag, 1992, pp. 77-78.
13. C. J. Chang-Hasnain, M. Orenstein, A. V. Lehmen, L. T. Florez, and J. P. Harbison, "Transverse mode characteristics of vertical cavity surface-emitting lasers," Appl. Phys. Lett., vol. 57, pp. 218-220, 1990.