Electrical behavior of the Au/MoS2 interface studied by light emission induced by scanning tunneling microscopy

Surface Science

Volumn 600, Issue 2, 2006, Pages 442-447

  Maurel, C ^a   Ajustron, F ^a   Pechou R ^a   Seine, G ^a   Coratger, R ^a  

^a CEMES CNRS   (France)

Author keywords

Gold; Photon emission; Plasmons; Scanning tunneling microscopy; Surface structure

Indexed keywords

ELECTRONIC PROPERTIES; GOLD; MOLYBDENUM COMPOUNDS; PHOTOEMISSION; PHOTONS; SCANNING TUNNELING MICROSCOPY;

NANOJUNCTIONS; PHOTON EMISSION; PLASMONS;

SURFACE STRUCTURE;

EID: 31144469816     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2005.10.042     Document Type: Article

References (27)

1. D.L. Abraham, A. Veider, C. Schonenberger, H.P. Meier, D.J. Arent, and S.F. Alvarado Appl. Phys. Lett. 56 1990 1564
2. A. Downes, and M.E. Welland Phys. Rev. B 81 1998 1857
3. C. Thirstrup, M. Sakurai, K. Stokbro, and M. Aono Phys. Rev. Lett. 82 1978 1241
4. R. Berndt, J.K. Gimzewski, and P. Johansson Phys. Rev. Lett. 67 1991 3796
5. R. Berndt, J.K. Gimzewski, and P. Johansson Phys. Rev. Lett. 71 1993 3493
6. Y. Uehara, T. Fujita, and S. Ushioda Phys. Rev. Lett. 83 1999 2445
7. N. Nilius, N. Ernst, and H.J. Freund Phys. Rev. B 65 2002 115421
8. P. Johansson Phys. Rev. B 58 1998 10823
9. J. Aizpurua, S. Apell, and R. Berndt Phys. Rev. B 62 2000 2065
10. Y. Uehara, T. Fujida, and S. Ushioda Phys. Rev. Lett. 83 1999 2445
11. X.H. Qiu, G.V. Nazin, and W. Ho Science 299 2003 542
12. Y. Uehara, S. Ohyama, K. Ito, and S. Ushioda Jpn. J. Appl. Phys., Part 2 35 1996 L167
13. Y. Uehara, T. IIda, K. Ito, M. Iwami, and S. Ushioda Phys. Rev. B 65 2002 155408
14. A. Carladous, R. Coratger, F. Ajustron, G. Seine, R. Péchou, and J. Beauvillain Phys. Rev. B 66 2002 45401
15. C. Maurel, R. Coratger, F. Ajustron, P. Gerard, and J. Beauvillain J. Appl. Phys. 94 2003 1979
16. T.P. Darby, and C.M. Wayman Phys. Status Solidi A 25 1974 585
17. G. Honjo, K. Takayanagi, K. Kobayashi, and K. Yagi Phys. Status Solidi A 55 1979 353
18. T. Ichinowaka, T. Ichinose, M. Tohyama, and H. Itoh J. Vac. Sci. Technol. A 8 1990 500
19. C. Maurel, R. Coratger, F. Ajustron, G. Seine, R. Péchou, and J. Beauvillain Surf. Sci. 529 2003 359
20. M.M.J. Bischoff, M.C.M.M. van der Wielen, and H. van Kempen Surf. Sci. 400 1998 127
21. D.G. Walmsley, Thiam-Seng Tan, and P. Dawson Surf. Sci. 572 2004 497
22. S. Sze Physics of Semiconductor Devices second ed. 1994 Wiley New York
23. F. Silly, A.O. Gusev, F. Charra, A. Taleb, and M.P. Pileni Appl. Phys. Lett. 79 2001 4013
24. W. Mönch Appl. Surf. Sci. 72 1998 1899
25. P. Avouris, I. Lyo, and Y. Hasegawa J. Vac. Sci. Technol. 11 1993 1725
26. R. Hasunuma, T. Komeda, and H. Tokumoto Appl. Surf. Sci. 130 1998 84
27. M. Hugelmann, and W. Schindler Appl. Phys. Lett. 85 2004 3608