Low temperature crystallization of high permittivity Ta oxide using an Nb oxide thin film for metal/insulator/metal capacitors in dynamic random access memory applications

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 23, Issue 1, 2005, Pages 80-83

  Ma, Dongjoon ^a   Park, Sungho ^b   Seo, Bum Seok ^b   Choi, Sangjun ^b   Lee, Naesung ^a   Lee, Jung Hyun ^b  

^a Sejong University   (South Korea)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLIZATION; DEPOSITION; DYNAMIC RANDOM ACCESS STORAGE; ELECTRODES; LEAKAGE CURRENTS; LOW TEMPERATURE EFFECTS; NIOBIUM COMPOUNDS; PERMITTIVITY; SYNTHESIS (CHEMICAL); THIN FILMS;

CAPACITANCE DENSITY; DIELECTRIC LAYERS;

TANTALUM COMPOUNDS;

EID: 31144440397     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1829060     Document Type: Article

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