Effect of annealing treatments on the microstructure of (Zr 0.8Sn0.2)TiO4 thin films sputtered on silicon

Thin Solid Films

Volumn 498, Issue 1-2, 2006, Pages 271-276

  Hsu, Cheng Hsing ^a   Huang, Cheng Liang ^b  

^a NATIONAL UNITED UNIVERSITY   (Taiwan)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

Dielectric; rf magnetron sputtering; Zr0.8Sn0.2TiO 4 thin film

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; MAGNETRON SPUTTERING; MICROSTRUCTURE; MORPHOLOGY; SCANNING ELECTRON MICROSCOPY; SILICON; TEMPERATURE DISTRIBUTION; THIN FILMS; TITANIUM OXIDES; X RAY DIFFRACTION;

DEPOSITION PRESSURE; RF MAGNETRON SPUTTERING; SUBSTRATE TEMPERATURE; ZR0.8SN0.2TIO 4 THIN FILM;

ZIRCONIUM COMPOUNDS;

EID: 30944465876     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.07.202     Document Type: Conference Paper

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