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Volumn , Issue , 2005, Pages 101-102

A novel five-transistor (5T) sram cell for high performance cache

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; INTEGRATED CIRCUIT LAYOUT;

EID: 30844457740     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (4)

References (7)
  • 1
    • 16544372853 scopus 로고    scopus 로고
    • A 90-nm low-power 32-kB embedded SRAM with gate leakage supression circuit for mobile applications
    • April
    • K. Nii et. al., "A 90-nm Low-Power 32-kB Embedded SRAM With Gate Leakage Supression Circuit for Mobile Applications," IEEE Journal of Solid-State Circuits, Vol. 39, No. 4, April 2004, Pages: 684-693.
    • (2004) IEEE Journal of Solid-State Circuits , vol.39 , Issue.4 , pp. 684-693
    • Nii, K.1
  • 2
    • 0036949087 scopus 로고    scopus 로고
    • Low-leakage asymmetric-cell SRAM
    • August
    • N. Azizi, A. Moshovos, F. N. Najm, "Low-Leakage Asymmetric-Cell SRAM," ISLPED, August 2002.
    • (2002) ISLPED
    • Azizi, N.1    Moshovos, A.2    Najm, F.N.3
  • 7
    • 0347528892 scopus 로고    scopus 로고
    • Ultralow-power SRAM Technology
    • Sept./Nov.
    • R.W. Mann et. al., "Ultralow-power SRAM Technology," IBM Journal of Research and Development, Volume: 47, Number: 5/6, Sept./Nov. 2003, Pages: 553-566.
    • (2003) IBM Journal of Research and Development , vol.47 , Issue.5-6 , pp. 553-566
    • Mann, R.W.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.