In-situ ellipsometry studies of adsorption of Hg on CdTe(211)B/Si(211) and molecular beam epitaxy growth of HgCdTe(211)B

Journal of Electronic Materials

Volumn 33, Issue 6, 2004, Pages 583-589

  Badano, G ^a   Chang, Y ^a   Garland, J W ^a   Sivananthan, S ^a  

^a UNIVERSITY OF ILLINOIS AT CHICAGO   (United States)

Author keywords

Ellipsometry; HgCdTe; Molecular beam epitaxy (MBE); Nucleation; Substrate; Temperature

Indexed keywords

ADSORPTION; CADMIUM; CHEMISORPTION; DIELECTRIC PROPERTIES; ELLIPSOMETRY; MATHEMATICAL MODELS; MERCURY (METAL); NUCLEATION; SIGNAL TO NOISE RATIO; THERMAL EFFECTS; THICKNESS MEASUREMENT;

PHYSISORBED FORMS; PSEUDO-DIELECTRIC FUNCTIONS; SPECTROSCOPIC ELLIPSOMETRY (SE); TRANSMISSION SPECTRUMS;

MOLECULAR BEAM EPITAXY;

EID: 3042833230     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-004-0050-9     Document Type: Conference Paper

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