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Applied Physics Letters

Volumn 84, Issue 24, 2004, Pages 4962-4964

Ion implant simulations: Kinetic Monte Carlo annealing assessment of the dominant features

(6) Martin Bragado, I a Jaraiz, M a Castrillo, P a Pinacho, R a Rubio, J E a Barbolla, J a

a UNIVERSITY OF VALLADOLID (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; APPROXIMATION THEORY; BINDING ENERGY; COMPUTER SIMULATION; CRYSTAL IMPURITIES; DIFFUSION; MONTE CARLO METHODS; POINT DEFECTS; SILICON; SUPERSATURATION;

ANNEALING SIMULATIONS; BINARY COLLISION APPROXIMATION (BCA); SPATIAL CORRELATIONS; TRANSIENT-ENHANCED DIFFUSION (TED);

ION IMPLANTATION;

EID: 3042816932 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1762696 Document Type: Article

Times cited : (6)

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