Direct patterning of single electron tunneling transistors by high resolution electron beam lithography on highly doped molecular beam epitaxy grown silicon films

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 16, Issue 6, 1998, Pages 3804-3807

  Koester, T ^a   Goldschmidtboeing, F ^a   Hadam, B ^a   Stein, J ^a   Altmeyer, S ^a   Spangenberg, B ^a   Kurz, H ^a   Neumann, R ^b   Brunner, K ^b   Abstreiter, G ^b  

^a UNIVERSITY HOSPITAL RWTH AACHEN   (Germany)

^b WALTER SCHOTTKY INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 3042771897     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.590412     Document Type: Article

References (11)

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