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Applied Physics A: Materials Science and Processing

Volumn 79, Issue 3, 2004, Pages 411-413

Highly regular nanometer-sized hexagonal pipes in 6H-SiC(0001)

(5) Wulfhekel, W a,c Sander, D a,c Nitsche, S a Leycuras, A b Hanbucken M a

a CAMPUS DE LUMINY (France)

b CRHEA CNRS (France)

c MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; ETCHING; HYDROGEN; ION BEAMS; NANOSTRUCTURED MATERIALS; PARTIAL PRESSURE; PIPE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR MATERIALS; SURFACE TREATMENT;

HOT-WALL REACTORS; HYDROGEN ETCHING;

SILICON CARBIDE;

EID: 3042765887 PISSN: 09478396 EISSN: None Source Type: Journal
DOI: 10.1007/s00339-004-2705-z Document Type: Article

Times cited : (4)

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