Nanostructural and photoluminescence features of nanoporous silicon prepared by anodic etching

Applied Surface Science

Volumn 190, Issue 1-4, 2002, Pages 171-175

  Lee, J S ^a   Cho, N H ^a  

^a Inha University   (South Korea)

Author keywords

Aging time; Anodic etching; Nanoporous silicon; Oxidation condition; Photoluminescence

Indexed keywords

AGING OF MATERIALS; ANODES; CURRENT DENSITY; ELECTRIC CONDUCTIVITY; ELECTROCHEMISTRY; ETCHING; HEAT TREATMENT; MORPHOLOGY; NANOSTRUCTURED MATERIALS; OXIDATION; PHOTOLUMINESCENCE; SILICON WAFERS;

ANODIC ETCHING;

POROUS SILICON;

EID: 0037042099     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(01)00884-4     Document Type: Article

References (14)