Optical-absorption model for molecular-beam epitaxy HgCdTe and application to infrared detector photoresponse

Journal of Electronic Materials

Volumn 33, Issue 6, 2004, Pages 701-708

  Moazzami, K ^a   Phillips, J ^a   Lee, D ^b   Edwall, D ^b   Carmody, M ^b   Piquette, E ^b   Zandian, M ^b   Arias, J ^b  

^a UNIVERSITY OF MICHIGAN   (United States)

^b ROCKWELL SCIENTIFIC COMPANY   (United States)

Author keywords

Absorption coefficient; Bandgap, composition; Cutoff wavelength; Detector spectral response; HgCdTe; Infrared (IR) detector; Molecular beam epitaxy (MBE); Optical absorption

Indexed keywords

COMPOSITION; DATA REDUCTION; ENERGY GAP; LIGHT ABSORPTION; MERCURY COMPOUNDS; MOLECULAR BEAM EPITAXY; PARAMETER ESTIMATION; SCREENING;

ABSORPTION COEFFICIENT; CUTOFF WAVELENGTH; DETECTOR-SPECTRAL RESPONSE; HGCDTE;

INFRARED DETECTORS;

EID: 3042756564     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-004-0069-y     Document Type: Conference Paper

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