Optical absorption properties of HgCdTe epilayers with uniform composition

Journal of Electronic Materials

Volumn 32, Issue 7, 2003, Pages 646-650

  Moazzami, K ^a   Liao, D ^a   Phillips, J D ^a   Lee, D L ^b   Carmody, M ^b   Zandian, M ^b   Edwall, D D ^b  

^a UNIVERSITY OF MICHIGAN   (United States)

^b ROCKWELL SCIENTIFIC COMPANY   (United States)

Author keywords

Band gap; HgCdTe; Infrared detector; Molecular beam epitaxy (MBE); Optical absorption

Indexed keywords

BAND STRUCTURE; COMPOSITION EFFECTS; INFRARED DETECTORS; LIGHT ABSORPTION; MOLECULAR BEAM EPITAXY;

UNIFORM COMPOSITION;

MERCURY COMPOUNDS;

EID: 0043269243     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-003-0046-x     Document Type: Conference Paper

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