Asymmetric capacitance-voltage characteristics of (Bi3.25, La0.75)Ti3O12 thin films grown on Si

Integrated Ferroelectrics

Volumn 40, Issue 1-5, 2001, Pages 225-234

  Choi, Taekjib ^a   Kim, Youngsung ^a   Lee, Jaichan ^a  

^a Sungkyunkwan University   (South Korea)

Author keywords

(Bi3.25, La0.75)Ti3O12; Asymmetric C V; Charge injection; MFIS

Indexed keywords

CAPACITANCE; FILM GROWTH; SILICON; THIN FILMS;

ASYMMETRIC C-V; MEMORY WINDOW;

BISMUTH COMPOUNDS;

EID: 3042708128     PISSN: 10584587     EISSN: 16078489     Source Type: Conference Proceeding    
DOI: 10.1080/10584580108010846     Document Type: Article

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