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Volumn 30, Issue 6, 1999, Pages 513-520

Open circuit voltage decay lifetime of ion irradiated devices

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; DIODES; ION BOMBARDMENT;

EID: 0032658292     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2692(98)00173-6     Document Type: Article
Times cited : (28)

References (11)
  • 1
    • 84878185666 scopus 로고
    • Measurement of minority carrier lifetime and surface effects in junction devices
    • Lederhandler S.R., Giacoletto L.J. Measurement of minority carrier lifetime and surface effects in junction devices. Proceedings of the IRE. 43:1955;477-483.
    • (1955) Proceedings of the IRE , vol.43 , pp. 477-483
    • Lederhandler, S.R.1    Giacoletto, L.J.2
  • 2
    • 0030378203 scopus 로고    scopus 로고
    • Optimization of power diode characteristics by means of ion irradiation
    • Vobecký J., Hazdra P., Homola J. Optimization of power diode characteristics by means of ion irradiation. IEEE Transactions on Electron Devices. 43:1996;2283-2289.
    • (1996) IEEE Transactions on Electron Devices , vol.43 , pp. 2283-2289
    • Vobecký, J.1    Hazdra, P.2    Homola, J.3
  • 3
    • 36149004075 scopus 로고
    • Electron-hole recombination in germanium
    • Hall R.N. Electron-hole recombination in germanium. Physical Review. 87:1952;387.
    • (1952) Physical Review , vol.87 , pp. 387
    • Hall, R.N.1
  • 4
    • 33748621800 scopus 로고
    • Statistics of the recombination of holes and electrons
    • Shockley W., Read W.T. Statistics of the recombination of holes and electrons. Physical Review. 87:1952;835-842.
    • (1952) Physical Review , vol.87 , pp. 835-842
    • Shockley, W.1    Read, W.T.2
  • 5
    • 0344670441 scopus 로고
    • Recombination in silicon p-π-n diodes
    • Wilson P.G. Recombination in silicon p-π-n diodes. Solid-State Electronics. 10:1967;145-154.
    • (1967) Solid-State Electronics , vol.10 , pp. 145-154
    • Wilson, P.G.1
  • 6
    • 0004440533 scopus 로고
    • On the post-injection voltage decay of p-s-n rectifiers at high injection levels
    • Schlangenotto H., Gerlach W. On the post-injection voltage decay of p-s-n rectifiers at high injection levels. Solid-State Electronics. 15:1972;393-402.
    • (1972) Solid-State Electronics , vol.15 , pp. 393-402
    • Schlangenotto, H.1    Gerlach, W.2
  • 7
    • 0015655139 scopus 로고
    • Determination of the bulk carrier lifetime in the low-doped region of a silicon power diode by the method of open circuit voltage decay
    • Bassett R.J., Fulop W., Hogarth C.A. Determination of the bulk carrier lifetime in the low-doped region of a silicon power diode by the method of open circuit voltage decay. Int. J. Electronics. 35:1973;177-192.
    • (1973) Int. J. Electronics , vol.35 , pp. 177-192
    • Bassett, R.J.1    Fulop, W.2    Hogarth, C.A.3
  • 8
    • 0020846843 scopus 로고
    • Minority carrier lifetimes using compensated differential open circuit voltage decay
    • Green M.A. Minority carrier lifetimes using compensated differential open circuit voltage decay. Solid-State Electronics. 26:1983;1117-1122.
    • (1983) Solid-State Electronics , vol.26 , pp. 1117-1122
    • Green, M.A.1
  • 9
    • 0030675705 scopus 로고    scopus 로고
    • Application of high energy ion beams for local lifetime control in silicon
    • Hazdra P., Vobecký J. Application of high energy ion beams for local lifetime control in silicon. Materials Science Forum. 248/249:1997;225-228.
    • (1997) Materials Science Forum , vol.248-249 , pp. 225-228
    • Hazdra, P.1    Vobecký, J.2
  • 11
    • 85031637354 scopus 로고
    • Achievement of quantitatively accurate simulation of ion-irradiated bipolar power devices
    • Wien: Springer-Verlag. pp. 186-189
    • Hazdra P., Vobecký J. Achievement of quantitatively accurate simulation of ion-irradiated bipolar power devices. Simulation of Semiconductor Devices and Processes. 6:1995;Springer-Verlag, Wien. pp. 186-189.
    • (1995) Simulation of Semiconductor Devices and Processes , vol.6
    • Hazdra, P.1    Vobecký, J.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.