Dynamic positive bias temperature instability characteristics of ultra-thin HfO 2 NMOSFET

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2004, Pages 269-272

  Rhee, Se Jong ^a   Kim, Young Hee ^a   Kang, Chang Yong ^a   Kang, Chang Seok ^a   Cho, Hag Ju ^a   Choi, Rino ^a   Choi, Chang Hwan ^a   Akbar, Mohammad S ^a   Lee, Jack C ^a  

^a The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GATE ELECTRODES; TEMPERATURE INSTABILITY; THRESHOLD VOLTAGE SHIFT; UNIPOLAR STRESSES;

ANNEALING; HAFNIUM COMPOUNDS; MAGNETRON SPUTTERING; PULSE GENERATORS; THERMODYNAMIC STABILITY; THRESHOLD VOLTAGE; TRANSCONDUCTANCE; ULTRATHIN FILMS;

MOSFET DEVICES;

EID: 3042559578     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

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8. 2", Proc. of IRPS, p46 (2003)