Chemical-mechanical polishing behavior of tantalum in slurries containing citric acid and alumina

Surface and Coatings Technology

Volumn 185, Issue 1, 2004, Pages 50-57

  Chen, Jui Chin ^a   Tsai, Wen Ta ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

Alumina; Chemical mechanical polishing (CMP); Citric acid; Hydrogen peroxide; Tantalum

Indexed keywords

ELECTROCHEMISTRY; SLURRIES; SURFACE ROUGHNESS; TANTALUM; X RAY PHOTOELECTRON SPECTROSCOPY;

METAL REMOVAL RATES; PASSIVE FILMS;

CHEMICAL MECHANICAL POLISHING;

CITRIC ACID; HYDROGEN PEROXIDE; POLISHING; SLURRY; TANTALUM;

EID: 3042548703     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.surfcoat.2003.12.025     Document Type: Article

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