Impact of the barrier/dielectric interface quality on reliability of Cu porous-low-k interconnects

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2004, Pages 326-332

  Tokei, Zs ^a   Sutcliffe, V ^a   Demuynck, S ^a   Iacopi, F ^a,b   Roussel, P ^a   Beyer, G P ^a   Hoofman, R J O M ^c   Maex, K ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

Barrier integrity; Cu law k; TDDB

Indexed keywords

BARRIER INTEGRITY; CU LOW-K; OXIDES FILMS; TDDB;

CAPACITORS; CHEMICAL VAPOR DEPOSITION; COPPER; DATA REDUCTION; DIELECTRIC MATERIALS; DIFFUSION; OXIDES; PERMITTIVITY; PHYSICAL VAPOR DEPOSITION; POLYMERS; POROUS MATERIALS;

LARGE SCALE SYSTEMS;

EID: 3042522553     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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