Pattern density effect of trench isolation-induced mechanical stress on device reliability in sub-0.1μm technology

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2004, Pages 489-492

  Shih, J R ^a   Wang, Robin ^a   Sheu, Y M ^a   Lin, H C ^a   Wang, J J ^a   Wu, Kenneth ^a  

^a Reliability Assurance Division   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL WIDTH; MECHANICAL STRESS; SHALLOW TRENCH ISOLATION (STI);

CARRIER CONCENTRATION; COMPRESSIVE STRESS; GATES (TRANSISTOR); PIEZOELECTRICITY; RELIABILITY; TENSILE STRESS; THERMAL EFFECTS;

MOSFET DEVICES;

EID: 3042516889     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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