NBT-induced hot carrier (HC) effect: Positive feedback mechanism in p-MOSFET's degradation

IEEE International Reliability Physics Symposium Proceedings

Volumn 2002-January, Issue , 2002, Pages 79-85

  Aono, H ^a   Murakami, E ^a   Okuyama, K ^a   Makabe, K ^b   Kuroda, K ^a   Watanabe, K ^a   Ozaki, H ^a   Yanagisawa, K ^a   Kubota, K ^a   Ohji, Y ^a  

^a HITACHI LTD   (Japan)

^b Hitachi ULSI   (Japan)

Author keywords

Degradation; Electric fields; Feedback; Hot carriers; MOSFET circuits; Oxidation; Stress measurement; Temperature; Threshold voltage; Ultra large scale integration

Indexed keywords

DEGRADATION; ELECTRIC FIELDS; FEEDBACK; HOT CARRIERS; OXIDATION; STRESS MEASUREMENT; TEMPERATURE; THRESHOLD VOLTAGE; ULSI CIRCUITS;

AC STRESS; DRAIN EDGE; FEEDBACK MECHANISMS; HOT-CARRIER EFFECTS; MOSFET CIRCUITS; P-MOSFETS; PMOSFET; POSITIVE FIXED OXIDE CHARGES;

MOSFET DEVICES;

EID: 0041967416     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2002.996613     Document Type: Conference Paper

References (12)

1. T. Tsuchiya, et al., IEEE Trans. Elect. Dev., p.404 (1992).
2. R. Woltjer, et al., IEEE Trans. Elect. Dev., p.109 (1995)
3. G. La Rosa, et al., IRPS, p.282 (1997)
4. N. Kimizuka, et al., Symp. on VLSI.Technol., p.73(1999)
5. N. Kimizuka, et al., Symp. on VLSI.Technol., p.92 (2000)
6. H. C. Wang, et al., IEEE. Elect. Dev. Lett., p.598 (2000)
7. T. Wang, et al., IEEE Trans. Elect. Dev., p.1877 (1999)
8. K. R. Mistry, et al., IEEE Trans. Elect. Dev., p.96 (1993)
9. R. Bellens, et al., IEEE Trans. Elect. Dev., p.1421 (1994)
10. N. Shimoyama, et al., IEEE Trans. Elect. Dev., p.1600 (1995)
11. S. Ogawa, et al., J. Appl. Phys. vol. 77, No 3. Feb (1995)
12. H. S. Momose, et al., IEDM Tech. Digest., p.453 (1997)